Deependra Kumar  Singh

Department Metallurgical Engineering
Designation Assistant Professor
Educational Qualification Ph.D. (Indian Institute of Science, Bangalore, 2021); M.S. (Indian Institute of Science, Bangalore, 2021); B.Tech. (Indian Institute of Technology Roorkee, 2015)
E-Mail dksingh.mme@nitrr.ac.in; deependrasingh92@gmail.com
Contact Number 8105950663
Areas of Interest

My research focuses on exploring and understanding the basic electronic and optoelectronic properties of 2D/3D heterostructure-based devices for resistive sensing. I have 7+ years of experience in ultra-high vacuum-based synthesis techniques. I have also worked on the design and safety of high energy density all solid-state lithium-ion batteries. Recently, I have started working in the field of neuromorphic computing utilizing 2D materials, metaloxides and III-nitride semiconductors.

Areas of Interest: Thin Film Deposition, 2D Materials, III-Nitrides, Metal Oxides, Photodetectors, Photocatalysis, Gas Sensors, Neuromorphic Devices, Lithium-ion Batteries

Publications

Publications

2024

1. Singh, D. K.; Gupta, G. Brain-Inspired Computing: Can 2D Materials Bridge the Gap Between Biological and Artificial Neural Networks? Mater. Adv. 2024, 5, 3158-3172.

2. Singh, D. K.; Prajapat, P.; Nanda, K. K.; Krupanidhi, S. B.; Gupta, G. Evidence of Synaptic Features and Volatility in Polar GaN-Based Optoelectronic Neuromorphic Sensor. Phys. Rev. Appl. (Under Review)

3. Prajapat, P.; Vashishtha, P.; Singh, D. K.; Goswami, L.; Mukherjee, R. K.; Tawale, J.; Gupta, G. Facile synthesized Sb2S3 based high-performance visible photodetector for weak optical signal detection. Sens.Actuator A Phys. 2024, 369, 115151.

4. Prajapat, P.; Singh, D. K.; Vashishtha, P.; Gupta, G. Reconfigurable Logic Operations in a MoS2-based Resistive Switching Device. (Submitted)

5. Singh, A. K.; Singh, D. K.; Singh, H. K.; Siwach, P. K. Exploring Phase Transition Dynamics in VO2 Films:The Role of Substrate Temperature. Curr. Appl. Phys. (Under Review)

2023

1. Singh, D. K.; Prajapat, P.; Saroha, J.; Pant, R. K.; Sharma, S. N.; Nanda, K. K.; Krupanidhi, S. B.; Gupta, G. Photocurrent Polarity Switching and Enhanced Photoresponse in Silver Nanoparticles Decorated a-GaN BasedPhotodetector. ACS Appl. Electron. Mater. 2023, 5(3), 1394–1400.

2. Kum, L. W.; Vallo, N.; Singh, D. K.; Kumar, J. Precise Cathode Interfacial Engineering for Enhanced Electrochemical and Thermal Stability of Lithium-Ion Batteries. ACS Appl. Energy Mater. 2023, 6(5), 2999-3009.

3. Liu, T.; Kum, L. W.; Singh, D. K.; Kumar, J. Thermal, Electrical, and Environmental Safeties of Sulfide Electrolyte-Based All-Solid-State Li-Ion Batteries. ACS Omega 2023, 8(13), 12411–12417.

4. Prajapat, P.; Singh, D. K.; Gupta, G. Growth of III-Nitrides by Molecular Beam Epitaxy: Unconventional Substrates for Conventional Semiconductors. Mater. Sci. Eng. B 2023, 295, 116574.

5. Augustine, P.; Singh, D. K.; Kumawat, K. L.; Sivan, V.; Krupanidhi, S. B; Nanda, K. K. Dual-Polarity Switching in Self-Powered Ag/MoS2/Ag Photodetectors. ACS Appl. Opt. Mater. 2023, 1(8), 1396–1404.

2022

1. Singh, D. K.; Gupta, G. van der Waals Epitaxy of Transition Metal Dichalcogenides via Molecular Beam Epitaxy: Looking Back and Moving Forward. Mater. Adv. 2022, 3, 6142.

2. Singh, D. K.; Pant, R.; Nanda, K. K.; Krupanidhi, S. B. Pulsed Laser Deposition for Conformal MoS2 on GaN Nanorods for Highly Efficient Self-Powered Photodetection. Mater. Adv. 2022, 3, 6343.

3. Kum, L. W.; Gogia, A.; Vallo, N.; Singh, D. K.; Kumar, J. Enhancing Electrochemical Performances of Rechargeable Lithium-Ion Batteries via Cathode Interfacial Engineering. ACS Appl. Mater. Interfaces 2022,14(3), 4100−4110.

4. Augustine, P.; Kumawat, K. L.; Singh, D. K.; Krupanidhi, S. B; Nanda, K. K. MoS2/SnO2 heterojunction based self-powered photodetector. Appl. Phys. Lett. 2022, 120, 181106.

5. Kumawat, K. L.; Augustine, P.; Singh, D. K.; Nanda, K. K.; Krupanidhi, S. B. Electrically modulated wavelength selective photodetection enabled by MoS2/ZnO heterostructure. Phys. Rev. Applied 2022, 17,064036.

6. Roul, B.; Singh, D. K.; Chowdhury, A. M.; Kumari, M.; Kumawat, K. L.; Nanda, K. K.; Krupanidhi, S. B. Enhancement of Photoresponsivity of β-In2S3/Si Broadband Photodetector by Decorating with reduced-Graphene Oxide (rGO). IEEE Trans. Electron Devices 2022, 69(8), 4355-4361.

7. Chowdhury, A. M.; Singh, D. K.; Roul, B.; Nanda, K. K.; Krupanidhi, S. B. Dependence of Defect Structure on In Concentration in InGaN Epilayers Grown on AlN/Si(111) Substrate. Mater. Adv. 2022, 3, 6237.

8. Kumawat, K. L.; Augustine, P.; Singh, D. K.; Krupanidhi, S. B.; Nanda, K. K. MoS2/CuO-Based Hybrid p-n Junction for High-Performance Self-Powered Photodetection. J. Mater. Chem. C 2022, 10, 14159-14168.

2021

1. Singh, D. K.; Pant, R.; Nanda, K. K.; Krupanidhi, S. B. Differentiation of Ultraviolet/Visible Photons from Near Infrared Photons by MoS2/GaN/Si-Based Photodetector. Appl. Phys. Lett. 2021, 119, 121102.

2. Kumawat, K. L.; Singh, D. K.; Nanda, K. K.; Krupanidhi, S. B. Solution-Processed SnSe2-RGO based Bulk Heterojunction for Self-Powered and Broadband Photodetection. ACS Appl. Electron. Mater. 2021, 3(7), 3131–3138.

3. Roul, B.*; Singh, D. K.*; Pant, R.; Chowdhury, A. M.; Nanda, K. K.; Krupanidhi, S. B. Electrical Transport Modulation of VO2/Si(111) Heterojunction by Engineering Interfacial Barrier Height. J. Appl. Phys. 2021, 129,244502.

4. Chowdhury, A. M.; Singh, D. K.; Roul, B.; Nanda, K. K.; Krupanidhi, S. B. Overcoming the challenges associated with InN/InGaN heterostructure via nanostructuring approach and its optoelectronic properties forbroad band photodetector. ACS Appl. Electron. Mater. 2021, 3(9), 4243–4253.

2020

1. Singh, D. K.; Pant, R.; Chowdhury, A. M.; Roul, B.; Nanda, K. K.; Krupanidhi, S. B. Defect Mediated Transport in Self-Powered, Broadband and Ultrafast Photoresponse of MoS2/AlN/Si Based Photodetector. ACS Appl. Electron. Mater. 2020, 2(4), 944–953.

2. Singh, D. K.; Roul, B.; Pant, R.; Chowdhury, A. M.; Nanda, K. K.; Krupanidhi, S. B. Different types of band alignment at MoS2/(Al, Ga, In)N heterointerfaces. Appl. Phys. Lett. 2020, 116, 252102.

3. Singh, D. K.; Pant, R.; Chowdhury, A. M.; Roul, B.; Nanda, K. K.; Krupanidhi, S. B. Temperature-Dependent Electrical Transport and Optoelectronic Properties of SnS2/p-Si Heterojunction. ACS Appl. Electron. Mater. 2020, 2(7), 2155–2163.

4. Rambabu, A.*; Singh, D. K.*; Pant, R.; Nanda, K. K.; Krupanidhi, S. B. Self-powered, ultrasensitive, roomtemperature humidity sensors using SnS2 nanofilms. Sci. Rep. 2020, 10, 14611.

5. Bhardwaj, D.; Singh, D. K.; Krupanidhi, S. B.; Umarji, A. M. Fabrication of smooth thin film of vanadium oxides (VOx) using pulsed laser deposition. Appl. Phys. A 2020, 126, 157.

6. Pant, R.; Singh, D. K.; Chowdhury, A. M.; Roul, B.; Nanda, K. K.; Krupanidhi, S. B. Next-generation selfpowered and ultrafast photodetectors based on III-nitride hybrid structures. APL Mater. 2020, 8, 020907.

7. Pant, R.; Singh, D. K.*; Chowdhury, A. M.*; Roul, B.; Nanda, K. K.; Krupanidhi, S. B. Highly Responsive, Self-Powered a-GaN Based UV-A Photodetectors Driven by Unintentional Asymmetrical Electrodes. ACS Appl.Electron. Mater. 2020, 2(3), 769−779.

8. Chowdhury, A. M.; Roul, B.; Singh, D. K.; Pant, R.; Nanda, K. K.; Krupanidhi, S. B. Temperature Dependent “S-Shaped” Photoluminescence Behavior of InGaN Nanolayers: Optoelectronic Implications in Harsh Environment. ACS Appl. Nano Mater. 2020, 3(8), 8453–8460.

9. Pant, R.; Roul, B.; Singh, D. K.; Chowdhury, A.; Nanda, K. K.; Krupanidhi, S. B. Inhomogeneity-mediated systematic reduction of the Schottky barrier in a Au/GaN nanorod film interface. Semicond. Sci. Technol. 2020, 36, 015017.

2019

1. Roul, B.; Pant, R.; Chowdhury, A. M.; Chandan, G.; Singh, D. K.; Chirakkara, S.; Nanda, K. K.; Krupanidhi, S. B. Highly Responsive ZnO/AlN/Si Heterostructure-Based Infrared- and Visible-Blind Ultraviolet Photodetectors with High Rejection Ratio. IEEE Trans. Electron Devices 2019, 66(3), 1345–1352.

2. Chowdhury, A. M.; Chandan, G.; Pant, R.; Roul, B.; Singh, D. K.; Nanda, K. K.; Krupanidhi, S. B. Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector. ACS Appl. Mater. Interfaces 2019, 11(10),10418–10425.

3. Pant, R.; Singh, D. K.; Roul, B.; Chowdhury, A.; Chandan, G.; Nanda, K. K.; Krupanidhi, S. B. Photodetection Properties of Nonpolar A-Plane GaN Grown by Three Approaches Using PAMBE. Phys. Status Solidi A 2019, 216(18), 1900171.

4. Chowdhury, A. M.; Pant, R.; Roul, B.; Singh, D. K.; Nanda, K. K.; Krupanidhi, S. B. Double Gaussian Distribution of Barrier Heights and Self-Powered Infrared Photoresponse of InN/AlN/Si (111) Heterostructure. J. Appl. Phys. 2019, 126(2), 025301.

 

Book Chapters

1. Singh, D. K.; Nanda, K. K.; Krupanidhi, S. B. Pulsed Laser Deposition of Transition Metal Dichalcogenides-Based Heterostructures for Efficient Photodetection. IntechOpen (Practical Applications of Laser Ablation) 2020 (DOI: 10.5772/intechopen.94236).

2. Singh, D. K.; Roul, B.; Nanda, K. K.; Krupanidhi, S. B. Group III-Nitrides and Their Hybrid Structures for Next-Generation Photodetectors. IntechOpen (Light-Emitting Diodes and Photodetectors - Advances and Future Directions) 2021 (DOI: 10.5772/intechopen.95389).

Other Info.

Professional Experience

  • Assistant Professor in Metallurgical and Materials Engineering (16/05/2024-Present), National Institute of Technology Raipur, India
  • DST-INSPIRE Faculty Fellow (16/05/2023-15/05/2024), CSIR-National Physical Laboratory, New Delhi, India
  • Post-Doctoral Fellow in Department of Electrical and Computer Engineering (01/06/2022-30/04/2023), University of Dayton, Ohio, United States
  • SERB-National Post-Doctoral Fellow (19/01/2022-18/05/2022), CSIR-National Physical Laboratory, New Delhi, India

Honors and Awards

  • INSPIRE Faculty Fellowship 2022 by Department Of Science & Technology, Govt. of India, New Delhi
  • National Post-Doctoral Fellowship 2021 Science and Engineering Research Board, Govt. of India, New Delhi
  • Joint CSIR-UGC Test for JRF 2014 conducted by Council of Scientific and Industrial Research, Govt. of India, New Delhi (All India Rank 98 in Engineering Sciences)
  • Joint Entrance Examination (JEE) 2011 conducted by Indian Institute of Technology (All India Rank: 3362)