Dr. Alok  Naugarhiya

Department Electronics & Telecom. Engineering
Designation Assistant Professor
Educational Qualification BE (EC), M.Tech (Microelectronics and VLSI Design), Ph.D. (ECE)
E-Mail anaugarhiya.etc@nitrr.ac.in
Contact Number 8989828339
Areas of Interest

VLSI design, semiconductor device modeling, analysis of superjunction power MOSFET, high-k devices, silicon carbide use in high power devices and strain effect on semiconductor power devices.

Publications

Google Scholar link

 https://scholar.google.co.in/citations?hl=en&user=bsEsv5wAAAAJ

International Journal Publications

Year 2024

A Ray, A Naugarhiya, GP Mishra “Improved post-radiation behavior of FinFET based CMOS with workfunction modulated gate”, Physica Scripta, Volume 99, Number 4, March 2024. DOI 10.1088/1402-4896/ad3386

Abhishek Ray, Alok Naugarhiya, Guru Prasad Mishra, “TID response of hybrid FinFET with modified gate dielectric”, Micro and Nanostructures, Volume 187, January 2024. DoI: https://doi.org/10.1016/j.micrna.2024.207759.

Year 2023 

A Ray, A Naugarhiya, GP Mishra Total ionizing dose effect of bulk and SOI P-FinFET with linear workfunction modulation technology” Microelectronics Journal Vol.137, pp. 105822(2023).

R Singh, A Naugarhiya, GP Mishra “Endurance behaviour of Z-shaped charge plasma Tunnel FET for biosensing applicationJournal of Circuits, Systems and Computers (2023).

Year 2022 

M Vaidya, A Naugarhiya, S Verma, GP Mishra “1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application” ECS Journal of Solid State Science and Technology. Vol. 11, pp. 111008 (2022).

A Ray, A Naugarhiya, GP Mishra “ Analysis of total ionizing dose response of optimized fin geometry workfunction modulated SOI-FinFET ” journal of Microelectronics Reliability , Vol. 134, pp. 114549 (2022).

N Gupta, P Roy, A Naugarhiya “Design and investigation of split (n/n-) buffer layer semi-superjunction IGBT” Journal of Applied Physics A , Vol. 128 , pp. 376 (2022).

N Gupta, P Roy, O Parmar, A Naugarhiya “Plasma Enhancement Semi-Superjunction Trench IGBT with Higher Figure-of-Merit” Journal of Electronic Materials , Vol. 51 , pp. 2576-2585 (2022).

O Parmar, N Gupta, A Naugarhiya “Reduction in area‐specific on‐resistance with vertical stepped doped high‐k VDMOS” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields , Vol. 35 , pp. e2979 (2022).

V Butram, A Naugarhiya “Performance enhancement of piezoelectric mems energy harvester using split proof mass for powering ultralow power wireless sensor nodes Arabian Journal for Science and Engineering , Vol. 47 , pp. 2755-2762 (2022).

M Vaidya, A Naugarhiya, S Verma, GP Mishra “Collector engineered bidirectional insulated gate bipolar transistor with low loss” Journal of IEEE Transactions on Electron Devices, Vol. 69 , pp. 1604-1607 (2022).

Year 2021

V Butram, A Mishra, A Naugarhiya “A lead-free spiral bimorph piezoelectric mems energy harvester for enhanced power density” IETE Technical Review , Vol. 38 , pp. 537-546 (2021).

O Parmar, A Naugarhiya “High temperature analysis of strained superjunction vertical single diffused MOSFET” International Journal of Modern Physics B , Vol. 35 , pp. 2150196 (2021).

M Vaidya, A Naugarhiya, S Verma, GP Mishra “A low-loss variable-doped trench-insulated gate bipolar transistor with reduced on-state voltage” Semiconductor Science and Technology , Vol. 36, pp. 075002 (2021).

S Agarwal, S Singh, BC Sahana, A Naugarhiya “Gaussian doped planar 4H-SiC junctionless field effect transistor for enhanced gate controllability” silicon , Vol. 13 , pp. 1609-1618 (2021).

N Gupta, A Naugarhiya “The design of a new heterogate superjunction insulated-gate bipolar transistor” Journal of Computational Electronics , Vol. 20 , pp. 883-891 (2021).

N Gupta, A Naugarhiya “1.4kV Planar Gate Superjunction IGBT with Stepped Doping Profile in Drift and Collector Region” Silicon, Vol.13, pp. 697-706 (2021). https://doi.org/10.1007/s12633-020-00456-8

Raj, A., Singh, S., Priyadarshani, K.N. et al. “Vertically Extended Drain Double Gate Si1−xGex Source Tunnel FET : Proposal & Investigation For Optimized Device Performance” Silicon 13, 2589–2604 (2021). https://doi.org/10.1007/s12633-020-00603-1

KN Priyadarshani, S Singh, A Naugarhiya “Dual metal double gate Ge-Pocket TFET (DMG-DG-Ge-Pocket TFET) with hetero dielectric: DC & analog performance projections” silicon , pp. 1-12 (2021).

KN Priyadarshani, S Singh, A Naugarhiya “RF & linearity distortion sensitivity analysis of DMG-DG-Ge pocket TFET with hetero dielectric” Microelectronics Journal , Vol. 108 , pp. 104973 (2021).

H Kumar, S Singh, KN Priyadarshani, J Ghosh “Contact engineered charge plasma junctionless transistor for suppressing tunneling leakage” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields , vol. 34 ,pp. e2812 (2021).

Year 2020

S Singh, S Singh, A Naugarhiya “Optimization of si-doped hfO2 ferroelectric material-based negative capacitance junctionless tfet: impact of temperature on rf/linearity performance” International Journal of Modern Physics B , Vol. 34 , pp. 2050242 (2020).

N. Gupta, S. Singh, & A. Naugarhiya, “An insulated gate bipolar transistor with three-layer poly gate for improved figure of merit” Journal of Materials Science: Materials in Electronics Vol. 31, 15513–15521 (2020).

Vicky Butram, Ashutosh Mishra & Alok Naugarhiya, “A Lead-Free Spiral Bimorph Piezoelectric MEMS Energy Harvester for Enhanced Power Density, IETE Technical Review, 2020.  DOI: 10.1080/02564602.2020.1799876

M. Vaidya, A. Naugarhiya, S. Verma and G. P. Mishra, "Lateral Variation-Doped Insulated Gate Bipolar Transistor for Low On-State Voltage With Low Loss," in IEEE Electron Device Letters, vol. 41, no. 6, pp. 888-891, June 2020.  Doi: 10.1109/LED.2020.2986941.

M Vaidya, A Naugarhiya, S Verma” Trench IGBT with stepped doped collector for low energy loss”, Semicond. Sci. Technol. 35, 2020. DOI 10.1088/1361-6641/ab6106

O Parmar, P Baghel, A Naugarhiya “Novel strained superjunction vertical single diffused MOSFET”, AEU - International Journal of Electronics and Communications, Volume 113, 2020. DOI: https://doi.org/10.1016/j.aeue.2019.152929.

Year 2019

P Nautiyal, A Naugarhiya, S Verma “An Assessment of Step Patterned Gate Oxide Superjunction Trench MOSFET for Potential Benefits”, J. Electron. Mater. 48, 8156–8162 (2019). https://doi.org/10.1007/s11664-019-07657-x.

P.Nautiyal, A. Naugarhiya, S.Verma, “Workfunction engineered stepped gate SJ UMOS with reduced specific resistance for high speed applications”, Semicond. Sci. Technol. 34 095016, 2019. DOI 10.1088/1361-6641/ab337f.

P.Nautiyal, A. Naugarhiya, S.Verma, “Strained superjunction U-MOSFET with insulating layer between alternate pillars”, Mater. Res. Express 6 046424, 2019. DOI 10.1088/2053-1591/aaff1d.

Year 2018

O.Parmar, A. Naugarhiya, “Incorporation of hafnium and platinum metal in vertical power MOSFETs”, J Comput Electron 17, 1241–1248 (2018). https://doi.org/10.1007/s10825-018-1193-x.

Year 2017

P.Nautiyal, A. Naugarhiya, S.Verma, “Novel Application of workfunction engineering in vertical superjunction devices” Superlattices and Microstructures, Volume 109, Pages 927-935, 2017. DOI: https://doi.org/10.1016/j.spmi.2017.06.024.

A. Naugarhiya” A Novel Charge-Protection SuperjunctionInsulator VDMOS”, International Journal of Electronics and Electrical Engineering Vol. 5, No. 3, June 2017.

A Naugarhiya, P Wakhradkar, PN Kondekar, GC Patil, RM Patrikar, “Analytical model for 4H-SiC superjunction drift layer with anisotropic properties for ultrahigh-voltage applications” Journal of Computational Electronics, vol.16, no.1, pp.190-201, 2017.

Year 2015

A Naugarhiya, PN Kondekar, “High permittivity material selection for design of optimum Hk VDMOS” Superlattices and Microstructures, vol. 83, pp.310-321, 2015.

A Naugarhiya, PN Kondekar, “Novel strained superjunction VDMOS” Superlattices and Microstructures, vol. 83, pp.310-321, 2015.

 

International Conference Publications

Year 2024

S. P. Behera, M. Vaidya and A. Naugarhiya, "Low Loss Gate Engineered Superjunction Insulated Gate Bipolar Transistor for High Speed Application," 2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID), Kolkata, India, 2024, pp. 1-5, doi: 10.1109/VLSID60093.2024.00005.

Year 2023

A. Naugarhiya, C. Das and M. Vaidya, "Insulated Gate Bipolar Transistors with Deep Trench Technology for Low Loss Switching Application," 2023 International Conference on Modeling, Simulation & Intelligent Computing (MoSICom), Dubai, United Arab Emirates, 2023, pp. 317-321, doi: 10.1109/MoSICom59118.2023.10458719.

S. Gupta, D. K. Meda and A. Naugarhiya, "SEGR Analysis of SJ_IGBT with High-k Gate Dielectrics for Radiation Environment," 2023 World Conference on Communication & Computing (WCONF), RAIPUR, India, 2023, pp. 1-5, doi: 10.1109/WCONF58270.2023.10235100.

MH Manzoor, A Ray, A Naugarhiya “ Analysis of GaAs FinFET Based Biosensor with Under Gate Cavity2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS) , pp. 1-6 (2023).

S Singh, S Ranjan, A Naugarhiya “SEGR and SEB Analysis of SJVDMOS using SiO 2/Si 3 N 4 as Gate Dielectric with Buffer layer2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS) ,pp. 1-6 (2023).

Year 2022

A Ray, A Naugarhiya, GP Mishra “ Influence of total ionizing dose on LWM Bulk and SOI p-FinFET ”  IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON). pp. 421-425 (2022).

M Vaidya, A Naugarhiya, S Verma, GP Mishra “1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application” ECS Journal of Solid State Science and Technology. Vol. 11, pp. 111008 (2022).

V Butram, A Naugarhiya “Analysis of Split Proof Mass Pieozoelectric Cantilever based MEMS Energy Harvesting System using Ultra Low Power Rectifier Circuit” IEEE Region 10 Symposium (TENSYMP) , pp. 1-4 (2022).

S Yogi, A Naugarhiya “Performance Optimization of IGZO-Based Junctionless Thin Film Transistor for Low Power Application” Proceedings of Fifth International Conference on Inventive Material Science Applications: ICIMA , pp. 285-294 (2022).

J Pavuluri, SM Ranjan, A Naugarhiya “Analysis of Gate Oxides in LDMOS for Radiation Hardening Against SEGR” International Conference on Intelligent Controller and Computing for Smart Power (ICICCSP) , pp. 1-6 (2022).

M Vaidya, A Naugarhiya, S Verma, GP Mishra “Low Loss Enabled Semi-superjunction 4H-SiC IGBT for High Voltage and Current Application” International Symposium on VLSI Design and Test , pp. 53-64 (2022).

M Amjath, S Ranjan, A Naugarhiya “SEGR Analysis of Super Junction VDMOS using HfO 2 as Gate Dielectric” Second International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT) , pp. 1-5 (2022).

N Gupta, A Naugarhiya “Capacitive Analysis of Superjunction Vertical IGBT with Gate Engineering” First International Conference on Electrical, Electronics, Information and Communication Technologies (ICEEICT) , pp. 1-5 (2022).

V Butram, A Ray, A Naugarhiya, GPSC Mishra “A Novel Concept of Roof Top Tip Mass in Cantilever Based Energy Harvester for Wireless Sensor Node” Proceedings of the 2nd International Conference on Data Science, Machine Learning and Applications , pp. 1497-1504 (2022).

Year 2021

A Ray, A Naugarhiya, GP Mishra “Study of Gate Workfunction Modulated FinFET with Effect of TIDModern Electronics Devices and Communication Systems: Select Proceedings of MEDCOM , pp. 253-259(2021).

P. Nautiyal, A. Naugarhiya and S. Verma, “Performance evaluation of superjunction UMOS with dual polysilicon gate." Materials Today: Proceedings 46 (2021): 4546-4552.

M. Vaidya, A. Naugarhiya and S. Verma, “Lateral variation doped wide bottom trench gate IGBT for reduced on-resistance with improved gate charge." Materials Today: Proceedings 46 (2021): 4587-4592.

N. Gupta and A. Naugarhiya. “1.4 kv superjunction igbt with variation doping profile for enhanced performance parameters." Materials Today: Proceedings 46 (2021): 4800-4806.

A Ray, A Naugarhiya, GP Mishra “Influence of SET effects in low-doped double gate MOSFETs” Materials Today: Proceedings , Vol. 43 , pp. 3867-3873 (2021).

R Verma, S Ranjan, A Naugarhiya “Analysis of Single Event Gate Rupture in Trench Gate SJ-VDMOS with SiO 2-Si 3 N 4 Dielectric Stacking” IEEE Region 10 Symposium (TENSYMP) , pp. 1-6 (2021).

O Parmar, P Nautiyal, A Naugarhiya “Capacitive Analysis of Strained Superjunction Vertical Single Diffused MOSFET”  Devices for Integrated Circuit (DevIC) , pp. 139-142 (2021).

KN Priyadarshani, S Singh, A Naugarhiya “Impact of Temperature on DC and Analog/RF Performance for DM-DG-Ge Pocket TFET” Proceedings of International Conference on Communication and Artificial Intelligence: ICCAI 2020 , pp.135-141 (2021).

Year 2020

A Chunn, A Agrawal, A Naugarhiya, “An 8T TG-DTMOS Based Subthreshold SRAM Cell with Improved Write Ability and Access Times”, 2020 24th International Symposium on VLSI Design and Test (VDAT), 1-6.

S. Ranjan, S. Majumder and A. Naugarhiya, "SEGR Hardened Superjunction VDMOS with High-K Gate Dielectrics," 2020 International Conference on Power Electronics & IoT Applications in Renewable Energy and its Control (PARC), Mathura, Uttar Pradesh, India, 2020, pp. 272-275, doi: 10.1109/PARC49193.2020.236606.

Year 2019

P.Nautiyal, A. Agrawal, S. Kumari, H. Sahu, A. Naugarhiya and S. Verma, “"Electrical characteristic investigation of variation vertical doping superjunction UMOS." In 2019 IEEE 16th India Council International Conference (INDICON), pp. 1-4. IEEE, 2019.

M. Vaidya, A. Naugarhiya, S. Verma, “"Design and Analysis of Improved IGBT with Embedded p+ in N-Buffer Layer." In 2019 IEEE 16th India Council International Conference (INDICON), pp. 1-4. IEEE, 2019.

P.Shukla, A. Chunn, A.Naugarhiya, “A robust 13T single ended Schmitt trigger based SRAM cell." In 2019 5th International Conference on Signal Processing, Computing and Control (ISPCC), pp. 329-334. IEEE, 2019.

V.Butram, A.Naugarhiya, “An Efficient Design of Spiral Shaped MEMS Energy Harvester for Low Power Electronic Applications." In 2019 5th International Conference on Signal Processing, Computing and Control (ISPCC), pp. 335-338. IEEE, 2019.

Ajeet Singh Lowanshi, Onika Parmar, Anshul Gupta and Alok Naugarhiya “An Effective Charge Plasma based Semi-Superjunction MOSFET”, 2nd IEEE - International Conference on Systems Computation Automation and Networking “29th and 30th March 2019, ICSCAN 2019, Puducherry, India.

S. Hafizullah, Mahesh Vaidya, Shrish Verma, Alok Naugarhiya, " An efficient hardware architecture for route discovery in AODV for a sensor node." In 2019 9th Annual Information Technology, Electromechanical Engineering and Microelectronics Conference (IEMECON), pp. 70-74. IEEE, 2019.

Prashant Kumar Kushwaha, Payal Nautiyal, Anshul Gupta, Alok Naugarhiya, Shrish Verma, “An improved SJ UMOS with modified gate electrode to reduce gate charge." In 2019 9th Annual Information Technology, Electromechanical Engineering and Microelectronics Conference (IEMECON), pp. 81-84. IEEE, 2019.

Abhishek Ray, Vicky Butram, Namrata Gupta, Alok Naugarhiya, " "Non-Conventional Cantilever for Piezoelectric Energy Harvesting at Ultra Low Resonant Frequency." In 2019 9th Annual Information Technology, Electromechanical Engineering and Microelectronics Conference (IEMECON), pp. 90-93. IEEE, 2019.

Year 2018

Shaik Hafizullah, M. S. S. V Srikrishna Manideep, Vinay Sharma, PallabKumar Nath, Alok Naugarhiya, Shrish Verma, “An Efficient Hardware Implementation of Walsh Hadamard Transform for JPEG XR”, 15th Edition of the IEEE India Council International Conference (INDICON), 2018, organised by Amrita Vishwa Vidyapeetham, Coimbatore.

Namrata Gupta, Abhishek Ray,  Alok Naugarhiya, Abhinav Gupta "Design and Optimization of MEMS Piezoelectric Cantilever for Vibration Energy Harvesting Application", in VCAS-2018 organised by MNNIT Allahabad.

Vicky Batrum, Alok Naugarhiya, “Non traditional proof mass arrangement in cantilever based pizeoelectric energy harvester” in ICCCS 2018 organized at Katmandu Nepal.

Onika Parmar and Alok Naugarhiya, “Application of workfunction  engineering in lateral power devices” in International Conference on Advacnces in Electronics Computers and Communication (ICAECC 2018) organized by, REVA University, Bangalore, India.

M Vaidya, A. Naugarhiya, S. Verma, “High Speed Generic Voltage Level Shifter” Second International Conference on Electronics, Computers and Communications (ICAECC-2018), REVA University, Bangalore, India.

P. Nautiyal, A. Naugarhiya, S. Verma, “Charge Plasma Based VVD-SJ VDMOS Employing Reversed Doping Concentration” Second International Conference on Electronics, Computers and Communications (ICAECC-2018), REVA University, Bangalore, India.

P. Nautiyal, O. Parmar A. Naugarhiya, S. Verma, “Design and Performance Projection of Workfunction Engineered Variable Vertical Doped Superjuction Vertical Single Diffused MOS” International Conference on Electronics, Computing and Communication Technologies (IEEE CONECCT 2018), Bangalore, India.

Ankush Chunn, A. Naugarhiya, “Use of Open Source CAD Tools in VLSI Design Curriculum for Developing Countries” International Conference on Computing, Engineering and Information Technology (ICCEIT 2018) ,Bangkok, Thailand.

Year 2017

A. Sharma, S. Majumdar, A. Naugarhiya, B. Acharya, S. Majumder, S. Verma, “VERILOG based simulation of ASK, FSK, PSK, QPSK digital modulation techniques”, International conference on IoT in Social, Mobile, Analytics and Cloud (I-SMAC 2017).

A. Chakradhari, S. Tamrakar, R. Basant, M. Vaidya, S. Majumdar, A. Naugarhiya, B. Acharya, S. Majumder and S. Verma “Slotted CSMA/CA Simulation in Verilog”, International Workshop on Internet of Things and TV White Spaces (WIOT’ 2017).

A. Chaudhary, J. Rusia, K. Gourav, P. Tripathi, J. Pandey, S. Majumdar, A. Naugarhiya, B. Acharya, S. Majumder, S. Verma, “Design and Simulation of Physical Layer Blocks of ZigBee Transmitter”, International conference on IoT in Social, Mobile, Analytics and Cloud (I-SMAC 2017). 

Year 2016

J. Rusia, S. Majumdar, A. Naugarhiya, B. Acharya, S. Majumder, S. Verma “Remote Temperature & Humidity sensing through ASK Modulation Technique”, International Conference on ICT in Business Industry Government (ICTBIG 2016).

J. Rusia, S. Majumdar, A. Naugarhiya, B. Acharya, S. Majumder, S. Verma  “RF Based Wireless Data Transmission between Two FPGAs”, International Conference on ICT in Business Industry Government (ICTBIG 2016).

Year 2015

P.Wakhradkar, A. Naugarhiya, and P. N. Kondekar, “Analysis of anisotropic 4h-sic sj drift layer,” in EESCO, Jan 2015, Visakhapatnam, India.

Year 2014

P. N. Kondekar and A. Naugarhiya, “Ac and transient analysis of sj vdmos,” in 11th ISETC, Nov 2014, Timisoara, Romania, Europe.

A. Naugarhiya and P. N. Kondekar, “Optimized process design flow for fabrication of superjunction vdmos for enhanced RDSonA,” in 11th ISETC, Nov 2014, Timisoara, Romania, Europe.

Year 2013

A. Naugarhiya and P. N. Kondekar, “Electrical characteristics comparison between process and device structures of super junction VDMOS,” in CARE, Dec 2013, Jabalpur, India.

Book Chapter

A Ray, A Naugarhiya, GP Mishra “Impact of total ionizing dose effect on SOI-FinFET with spacer engineeringDevice Circuit Co-Design Issues in FETs, pp.143-160.CRC PRESS (2023).

Conference Proceeding

Onika Parmar and Alok Naugarhiya, “Survey on charge plasma application in semiconductor   devices”, presented at National and Computing (VCC 2017), organized by National Institute of technology, Raipur.

Vicky Butram and Alok Naugarhiya, “Cantilever based Piezoelectric Generator design using circular electrode”, presented at National and Computing (VCC 2017), organized by National Institute of technology, Raipur.

Namrata Gupta and Alok Naugarhiya, “Design and optimization of Microcantilever based sensor for chemicals”, presented at National and Computing (VCC 2017), organized by National Institute of technology, Raipur.

 

 

 

International Journal

Year 2024

1.         A Ray, A Naugarhiya, GP Mishra “Improved post-radiation behavior of FinFET based CMOS with workfunction modulated gate”, Physica Scripta, Volume 99, Number 4, March 2024. DOI 10.1088/1402-4896/ad3386

2.         Abhishek Ray, Alok Naugarhiya, Guru Prasad Mishra, “TID response of hybrid FinFET with modified gate dielectric”, Micro and Nanostructures, Volume 187, January 2024. DoI: https://doi.org/10.1016/j.micrna.2024.207759.

Year 2023 

3.         A Ray, A Naugarhiya, GP Mishra Total ionizing dose effect of bulk and SOI P-FinFET with linear workfunction modulation technology” Microelectronics Journal Vol.137, pp. 105822(2023).

4.         R Singh, A Naugarhiya, GP Mishra “Endurance behaviour of Z-shaped charge plasma Tunnel FET for biosensing applicationJournal of Circuits, Systems and Computers (2023).

Year 2022

5.         M Vaidya, A Naugarhiya, S Verma, GP Mishra “1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application” ECS Journal of Solid State Science and Technology. Vol. 11, pp. 111008 (2022).

6.         A Ray, A Naugarhiya, GP Mishra “ Analysis of total ionizing dose response of optimized fin geometry workfunction modulated SOI-FinFET ” journal of Microelectronics Reliability , Vol. 134, pp. 114549 (2022).

7.         N Gupta, P Roy, A Naugarhiya “Design and investigation of split (n/n-) buffer layer semi-superjunction IGBT” Journal of Applied Physics A , Vol. 128 , pp. 376 (2022).

8.         N Gupta, P Roy, O Parmar, A Naugarhiya “Plasma Enhancement Semi-Superjunction Trench IGBT with Higher Figure-of-Merit” Journal of Electronic Materials , Vol. 51 , pp. 2576-2585 (2022).

9.         O Parmar, N Gupta, A Naugarhiya “Reduction in area‐specific on‐resistance with vertical stepped doped high‐k VDMOS” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields , Vol. 35 , pp. e2979 (2022).

10.     V Butram, A Naugarhiya “Performance enhancement of piezoelectric mems energy harvester using split proof mass for powering ultralow power wireless sensor nodes Arabian Journal for Science and Engineering , Vol. 47 , pp. 2755-2762 (2022).

11.     M Vaidya, A Naugarhiya, S Verma, GP Mishra “Collector engineered bidirectional insulated gate bipolar transistor with low loss” Journal of IEEE Transactions on Electron Devices, Vol. 69 , pp. 1604-1607 (2022).

Year 2021

12.     V Butram, A Mishra, A Naugarhiya “A lead-free spiral bimorph piezoelectric mems energy harvester for enhanced power density” IETE Technical Review , Vol. 38 , pp. 537-546 (2021).

13.     O Parmar, A Naugarhiya “High temperature analysis of strained superjunction vertical single diffused MOSFET” International Journal of Modern Physics B , Vol. 35 , pp. 2150196 (2021).

14.     M Vaidya, A Naugarhiya, S Verma, GP Mishra “A low-loss variable-doped trench-insulated gate bipolar transistor with reduced on-state voltage” Semiconductor Science and Technology , Vol. 36, pp. 075002 (2021).

15.     S Agarwal, S Singh, BC Sahana, A Naugarhiya “Gaussian doped planar 4H-SiC junctionless field effect transistor for enhanced gate controllability” silicon , Vol. 13 , pp. 1609-1618 (2021).

16.     N Gupta, A Naugarhiya “The design of a new heterogate superjunction insulated-gate bipolar transistor” Journal of Computational Electronics , Vol. 20 , pp. 883-891 (2021).

17.     N Gupta, A Naugarhiya “1.4kV Planar Gate Superjunction IGBT with Stepped Doping Profile in Drift and Collector Region” Silicon, Vol.13, pp. 697-706 (2021). https://doi.org/10.1007/s12633-020-00456-8

18.     Raj, A., Singh, S., Priyadarshani, K.N. et al. “Vertically Extended Drain Double Gate Si1−xGex Source Tunnel FET : Proposal & Investigation For Optimized Device Performance” Silicon 13, 2589–2604 (2021). https://doi.org/10.1007/s12633-020-00603-1

19.     KN Priyadarshani, S Singh, A Naugarhiya “Dual metal double gate Ge-Pocket TFET (DMG-DG-Ge-Pocket TFET) with hetero dielectric: DC & analog performance projections” silicon , pp. 1-12 (2021).

20.     KN Priyadarshani, S Singh, A Naugarhiya “RF & linearity distortion sensitivity analysis of DMG-DG-Ge pocket TFET with hetero dielectric” Microelectronics Journal , Vol. 108 , pp. 104973 (2021).

21.     H Kumar, S Singh, KN Priyadarshani, J Ghosh “Contact engineered charge plasma junctionless transistor for suppressing tunneling leakage” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields , vol. 34 ,pp. e2812 (2021).

Year 2020

22.     S Singh, S Singh, A Naugarhiya “Optimization of si-doped hfO2 ferroelectric material-based negative capacitance junctionless tfet: impact of temperature on rf/linearity performance” International Journal of Modern Physics B , Vol. 34 , pp. 2050242 (2020).

23.     N. Gupta, S. Singh, & A. Naugarhiya, “An insulated gate bipolar transistor with three-layer poly gate for improved figure of merit” Journal of Materials Science: Materials in Electronics Vol. 31, 15513–15521 (2020).

24.     Vicky Butram, Ashutosh Mishra & Alok Naugarhiya, “A Lead-Free Spiral Bimorph Piezoelectric MEMS Energy Harvester for Enhanced Power Density, IETE Technical Review, 2020.  DOI: 10.1080/02564602.2020.1799876

25.     M. Vaidya, A. Naugarhiya, S. Verma and G. P. Mishra, "Lateral Variation-Doped Insulated Gate Bipolar Transistor for Low On-State Voltage With Low Loss," in IEEE Electron Device Letters, vol. 41, no. 6, pp. 888-891, June 2020.  Doi: 10.1109/LED.2020.2986941.

26.  M Vaidya, A Naugarhiya, S Verma” Trench IGBT with stepped doped collector for low energy loss”, Semicond. Sci. Technol. 35, 2020. DOI 10.1088/1361-6641/ab6106

27.  O Parmar, P Baghel, A Naugarhiya “Novel strained superjunction vertical single diffused MOSFET”, AEU - International Journal of Electronics and Communications, Volume 113, 2020. DOI: https://doi.org/10.1016/j.aeue.2019.152929.

Year 2019

28.  P Nautiyal, A Naugarhiya, S Verma “An Assessment of Step Patterned Gate Oxide Superjunction Trench MOSFET for Potential Benefits”, J. Electron. Mater. 48, 8156–8162 (2019). https://doi.org/10.1007/s11664-019-07657-x.

29.  P.Nautiyal, A. Naugarhiya, S.Verma, “Workfunction engineered stepped gate SJ UMOS with reduced specific resistance for high speed applications”, Semicond. Sci. Technol. 34 095016, 2019. DOI 10.1088/1361-6641/ab337f.

30.  P.Nautiyal, A. Naugarhiya, S.Verma, “Strained superjunction U-MOSFET with insulating layer between alternate pillars”, Mater. Res. Express 6 046424, 2019. DOI 10.1088/2053-1591/aaff1d.

Year 2018

31.  O.Parmar, A. Naugarhiya, “Incorporation of hafnium and platinum metal in vertical power MOSFETs”, J Comput Electron 17, 1241–1248 (2018). https://doi.org/10.1007/s10825-018-1193-x.

Year 2017

32.  P.Nautiyal, A. Naugarhiya, S.Verma, “Novel Application of workfunction engineering in vertical superjunction devices” Superlattices and Microstructures, Volume 109, Pages 927-935, 2017. DOI: https://doi.org/10.1016/j.spmi.2017.06.024.

33.  A. Naugarhiya” A Novel Charge-Protection SuperjunctionInsulator VDMOS”, International Journal of Electronics and Electrical Engineering Vol. 5, No. 3, June 2017.

34.  A Naugarhiya, P Wakhradkar, PN Kondekar, GC Patil, RM Patrikar, “Analytical model for 4H-SiC superjunction drift layer with anisotropic properties for ultrahigh-voltage applications” Journal of Computational Electronics, vol.16, no.1, pp.190-201, 2017.

Year 2015

35.  A Naugarhiya, PN Kondekar, “High permittivity material selection for design of optimum Hk VDMOS” Superlattices and Microstructures, vol. 83, pp.310-321, 2015.

36.  A Naugarhiya, PN Kondekar, “Novel strained superjunction VDMOS” Superlattices and Microstructures, vol. 83, pp.310-321, 2015.

 

International Publications Conference

Year 2024

1.      S. P. Behera, M. Vaidya and A. Naugarhiya, "Low Loss Gate Engineered Superjunction Insulated Gate Bipolar Transistor for High Speed Application," 2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID), Kolkata, India, 2024, pp. 1-5, doi: 10.1109/VLSID60093.2024.00005.

Year 2023

2.      A. Naugarhiya, C. Das and M. Vaidya, "Insulated Gate Bipolar Transistors with Deep Trench Technology for Low Loss Switching Application," 2023 International Conference on Modeling, Simulation & Intelligent Computing (MoSICom), Dubai, United Arab Emirates, 2023, pp. 317-321, doi: 10.1109/MoSICom59118.2023.10458719.

3.      S. Gupta, D. K. Meda and A. Naugarhiya, "SEGR Analysis of SJ_IGBT with High-k Gate Dielectrics for Radiation Environment," 2023 World Conference on Communication & Computing (WCONF), RAIPUR, India, 2023, pp. 1-5, doi: 10.1109/WCONF58270.2023.10235100.

4.      MH Manzoor, A Ray, A Naugarhiya “ Analysis of GaAs FinFET Based Biosensor with Under Gate Cavity2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS) , pp. 1-6 (2023).

5.      S Singh, S Ranjan, A Naugarhiya “SEGR and SEB Analysis of SJVDMOS using SiO 2/Si 3 N 4 as Gate Dielectric with Buffer layer2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS) ,pp. 1-6 (2023).

Year 2022

6.      A Ray, A Naugarhiya, GP Mishra “ Influence of total ionizing dose on LWM Bulk and SOI p-FinFET ”  IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON). pp. 421-425 (2022).

7.      M Vaidya, A Naugarhiya, S Verma, GP Mishra “1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application” ECS Journal of Solid State Science and Technology. Vol. 11, pp. 111008 (2022).

8.      V Butram, A Naugarhiya “Analysis of Split Proof Mass Pieozoelectric Cantilever based MEMS Energy Harvesting System using Ultra Low Power Rectifier Circuit” IEEE Region 10 Symposium (TENSYMP) , pp. 1-4 (2022).

9.      S Yogi, A Naugarhiya “Performance Optimization of IGZO-Based Junctionless Thin Film Transistor for Low Power Application” Proceedings of Fifth International Conference on Inventive Material Science Applications: ICIMA , pp. 285-294 (2022).

10.  J Pavuluri, SM Ranjan, A Naugarhiya “Analysis of Gate Oxides in LDMOS for Radiation Hardening Against SEGR” International Conference on Intelligent Controller and Computing for Smart Power (ICICCSP) , pp. 1-6 (2022).

11.  M Vaidya, A Naugarhiya, S Verma, GP Mishra “Low Loss Enabled Semi-superjunction 4H-SiC IGBT for High Voltage and Current Application” International Symposium on VLSI Design and Test , pp. 53-64 (2022).

12.  M Amjath, S Ranjan, A Naugarhiya “SEGR Analysis of Super Junction VDMOS using HfO 2 as Gate Dielectric” Second International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT) , pp. 1-5 (2022).

13.  N Gupta, A Naugarhiya “Capacitive Analysis of Superjunction Vertical IGBT with Gate Engineering” First International Conference on Electrical, Electronics, Information and Communication Technologies (ICEEICT) , pp. 1-5 (2022).

14.  V Butram, A Ray, A Naugarhiya, GPSC Mishra “A Novel Concept of Roof Top Tip Mass in Cantilever Based Energy Harvester for Wireless Sensor Node” Proceedings of the 2nd International Conference on Data Science, Machine Learning and Applications , pp. 1497-1504 (2022).

Year 2021

15.  A Ray, A Naugarhiya, GP Mishra “Study of Gate Workfunction Modulated FinFET with Effect of TIDModern Electronics Devices and Communication Systems: Select Proceedings of MEDCOM , pp. 253-259(2021).

16.  P. Nautiyal, A. Naugarhiya and S. Verma, “Performance evaluation of superjunction UMOS with dual polysilicon gate." Materials Today: Proceedings 46 (2021): 4546-4552.

17.  M. Vaidya, A. Naugarhiya and S. Verma, “Lateral variation doped wide bottom trench gate IGBT for reduced on-resistance with improved gate charge." Materials Today: Proceedings 46 (2021): 4587-4592.

18.  N. Gupta and A. Naugarhiya. “1.4 kv superjunction igbt with variation doping profile for enhanced performance parameters." Materials Today: Proceedings 46 (2021): 4800-4806.

19.  A Ray, A Naugarhiya, GP Mishra “Influence of SET effects in low-doped double gate MOSFETs” Materials Today: Proceedings , Vol. 43 , pp. 3867-3873 (2021).

20.  R Verma, S Ranjan, A Naugarhiya “Analysis of Single Event Gate Rupture in Trench Gate SJ-VDMOS with SiO 2-Si 3 N 4 Dielectric Stacking” IEEE Region 10 Symposium (TENSYMP) , pp. 1-6 (2021).

21.  O Parmar, P Nautiyal, A Naugarhiya “Capacitive Analysis of Strained Superjunction Vertical Single Diffused MOSFET”  Devices for Integrated Circuit (DevIC) , pp. 139-142 (2021).

22.  KN Priyadarshani, S Singh, A Naugarhiya “Impact of Temperature on DC and Analog/RF Performance for DM-DG-Ge Pocket TFET” Proceedings of International Conference on Communication and Artificial Intelligence: ICCAI 2020 , pp.135-141 (2021).

Year 2020

23.  A Chunn, A Agrawal, A Naugarhiya, “An 8T TG-DTMOS Based Subthreshold SRAM Cell with Improved Write Ability and Access Times”, 2020 24th International Symposium on VLSI Design and Test (VDAT), 1-6.

24.  S. Ranjan, S. Majumder and A. Naugarhiya, "SEGR Hardened Superjunction VDMOS with High-K Gate Dielectrics," 2020 International Conference on Power Electronics & IoT Applications in Renewable Energy and its Control (PARC), Mathura, Uttar Pradesh, India, 2020, pp. 272-275, doi: 10.1109/PARC49193.2020.236606.

Year 2019

25.  P.Nautiyal, A. Agrawal, S. Kumari, H. Sahu, A. Naugarhiya and S. Verma, “"Electrical characteristic investigation of variation vertical doping superjunction UMOS." In 2019 IEEE 16th India Council International Conference (INDICON), pp. 1-4. IEEE, 2019.

26.  M. Vaidya, A. Naugarhiya, S. Verma, “"Design and Analysis of Improved IGBT with Embedded p+ in N-Buffer Layer." In 2019 IEEE 16th India Council International Conference (INDICON), pp. 1-4. IEEE, 2019.

27.  P.Shukla, A. Chunn, A.Naugarhiya, “A robust 13T single ended Schmitt trigger based SRAM cell." In 2019 5th International Conference on Signal Processing, Computing and Control (ISPCC), pp. 329-334. IEEE, 2019.

28.  V.Butram, A.Naugarhiya, “An Efficient Design of Spiral Shaped MEMS Energy Harvester for Low Power Electronic Applications." In 2019 5th International Conference on Signal Processing, Computing and Control (ISPCC), pp. 335-338. IEEE, 2019.

29.  Ajeet Singh Lowanshi, Onika Parmar, Anshul Gupta and Alok Naugarhiya “An Effective Charge Plasma based Semi-Superjunction MOSFET”, 2nd IEEE - International Conference on Systems Computation Automation and Networking “29th and 30th March 2019, ICSCAN 2019, Puducherry, India.

30.  S. Hafizullah, Mahesh Vaidya, Shrish Verma, Alok Naugarhiya, " An efficient hardware architecture for route discovery in AODV for a sensor node." In 2019 9th Annual Information Technology, Electromechanical Engineering and Microelectronics Conference (IEMECON), pp. 70-74. IEEE, 2019.

31.  Prashant Kumar Kushwaha, Payal Nautiyal, Anshul Gupta, Alok Naugarhiya, Shrish Verma, “An improved SJ UMOS with modified gate electrode to reduce gate charge." In 2019 9th Annual Information Technology, Electromechanical Engineering and Microelectronics Conference (IEMECON), pp. 81-84. IEEE, 2019.

32.  Abhishek Ray, Vicky Butram, Namrata Gupta, Alok Naugarhiya, " "Non-Conventional Cantilever for Piezoelectric Energy Harvesting at Ultra Low Resonant Frequency." In 2019 9th Annual Information Technology, Electromechanical Engineering and Microelectronics Conference (IEMECON), pp. 90-93. IEEE, 2019.

Year 2018

33.  Shaik Hafizullah, M. S. S. V Srikrishna Manideep, Vinay Sharma, PallabKumar Nath, Alok Naugarhiya, Shrish Verma, “An Efficient Hardware Implementation of Walsh Hadamard Transform for JPEG XR”, 15th Edition of the IEEE India Council International Conference (INDICON), 2018, organised by Amrita Vishwa Vidyapeetham, Coimbatore.

34.  Namrata Gupta, Abhishek Ray,  Alok Naugarhiya, Abhinav Gupta "Design and Optimization of MEMS Piezoelectric Cantilever for Vibration Energy Harvesting Application", in VCAS-2018 organised by MNNIT Allahabad.

35.  Vicky Batrum, Alok Naugarhiya, “Non traditional proof mass arrangement in cantilever based pizeoelectric energy harvester” in ICCCS 2018 organized at Katmandu Nepal.

36.  Onika Parmar and Alok Naugarhiya, “Application of workfunction  engineering in lateral power devices” in International Conference on Advacnces in Electronics Computers and Communication (ICAECC 2018) organized by, REVA University, Bangalore, India.

37.  M Vaidya, A. Naugarhiya, S. Verma, “High Speed Generic Voltage Level Shifter” Second International Conference on Electronics, Computers and Communications (ICAECC-2018), REVA University, Bangalore, India.

38.  P. Nautiyal, A. Naugarhiya, S. Verma, “Charge Plasma Based VVD-SJ VDMOS Employing Reversed Doping Concentration” Second International Conference on Electronics, Computers and Communications (ICAECC-2018), REVA University, Bangalore, India.

39.  P. Nautiyal, O. Parmar A. Naugarhiya, S. Verma, “Design and Performance Projection of Workfunction Engineered Variable Vertical Doped Superjuction Vertical Single Diffused MOS” International Conference on Electronics, Computing and Communication Technologies (IEEE CONECCT 2018), Bangalore, India.

40.  Ankush Chunn, A. Naugarhiya, “Use of Open Source CAD Tools in VLSI Design Curriculum for Developing Countries” International Conference on Computing, Engineering and Information Technology (ICCEIT 2018) ,Bangkok, Thailand.

Year 2017

41.  A. Sharma, S. Majumdar, A. Naugarhiya, B. Acharya, S. Majumder, S. Verma, “VERILOG based simulation of ASK, FSK, PSK, QPSK digital modulation techniques”, International conference on IoT in Social, Mobile, Analytics and Cloud (I-SMAC 2017).

42.  A. Chakradhari, S. Tamrakar, R. Basant, M. Vaidya, S. Majumdar, A. Naugarhiya, B. Acharya, S. Majumder and S. Verma “Slotted CSMA/CA Simulation in Verilog”, International Workshop on Internet of Things and TV White Spaces (WIOT’ 2017).

43.  A. Chaudhary, J. Rusia, K. Gourav, P. Tripathi, J. Pandey, S. Majumdar, A. Naugarhiya, B. Acharya, S. Majumder, S. Verma, “Design and Simulation of Physical Layer Blocks of ZigBee Transmitter”, International conference on IoT in Social, Mobile, Analytics and Cloud (I-SMAC 2017). 

Year 2016

44.  J. Rusia, S. Majumdar, A. Naugarhiya, B. Acharya, S. Majumder, S. Verma “Remote Temperature & Humidity sensing through ASK Modulation Technique”, International Conference on ICT in Business Industry Government (ICTBIG 2016).

45.  J. Rusia, S. Majumdar, A. Naugarhiya, B. Acharya, S. Majumder, S. Verma  “RF Based Wireless Data Transmission between Two FPGAs”, International Conference on ICT in Business Industry Government (ICTBIG 2016).

Year 2015

46.  P.Wakhradkar, A. Naugarhiya, and P. N. Kondekar, “Analysis of anisotropic 4h-sic sj drift layer,” in EESCO, Jan 2015, Visakhapatnam, India.

Year 2014

47.  P. N. Kondekar and A. Naugarhiya, “Ac and transient analysis of sj vdmos,” in 11th ISETC, Nov 2014, Timisoara, Romania, Europe.

48.  A. Naugarhiya and P. N. Kondekar, “Optimized process design flow for fabrication of superjunction vdmos for enhanced RDSonA,” in 11th ISETC, Nov 2014, Timisoara, Romania, Europe.

Year 2013

49.  A. Naugarhiya and P. N. Kondekar, “Electrical characteristics comparison between process and device structures of super junction VDMOS,” in CARE, Dec 2013, Jabalpur, India.

Book Chapter

1.    A Ray, A Naugarhiya, GP Mishra “Impact of total ionizing dose effect on SOI-FinFET with spacer engineeringDevice Circuit Co-Design Issues in FETs, pp.143-160.CRC PRESS (2023).

Conference Proceeding

  1. Onika Parmar and Alok Naugarhiya, “Survey on charge plasma application in semiconductor   devices”, presented at National and Computing (VCC 2017), organized by National Institute of technology, Raipur.
  2. Vicky Butram and Alok Naugarhiya, “Cantilever based Piezoelectric Generator design using circular electrode”, presented at National and Computing (VCC 2017), organized by National Institute of technology, Raipur.
  3. Namrata Gupta and Alok Naugarhiya, “Design and optimization of Microcantilever based sensor for chemicals”, presented at National and Computing (VCC 2017), organized by National Institute of technology, Raipur.
Other Info.

1. Ph.D Thesis Supervision (Currently at NIT Raipur)

S. No.

Name

Area of Interest/ Title of Thesis

Name of other supervisor (If any) 

Status

1

Payal Nautiyal

(Joint-Supervisor)

Design and Analysis of Improved Superjunction Power MOSFETs with Optimized Parameters

Prof. (Dr) Shrish Verma

Awarded,

October, 2020

2

Onika Parmar

Performance Parametric Optimization of Lateral and Vertical Power MOSFETs

 

Awarded,

May, 2022

3

Mahesh Vaidaya

(Joint-Supervisor)

Design and Analysis of Trench Superjunction Insulated Gate Bipolar Transistor: Limitations and Solutions

Prof. (Dr) Shrish Verma

Awarded,

May, 2022

4

Vicky Butram

Design and Optimization of Ultra-Low Frequency Piezoelectric Micro-Cantilever for Energy Harvesting

 

Awarded,

November, 2022

5

Namarta Gupta

Design and Analysis of Asymmetric Superjunction Insulated Gate Bipolar Transistor: Limitations and Solutions

 

Awarded,

December, 2022

6

Sanjeev Ranjan

(Supervisor)

Radiation Hardening in VDMOS

Dr. Saikat Majumder

Ongoing

7

Abhishek Ray

(Supervisor)

Design of Radiation Hardened FinFET for Integrated Circuit Applications

Dr. GPSC Mishra

Awarded,

April 2024

8

Upendra Soni

Design and Simulation of ISFET

Dr. Chitrakant Sahu

Ongoing

9

Y. Prasad,

Semiconductor Devices

 

Ongoing


  2. M.Tech Thesis Supervision (Currently At NIT Raipur)

S.No.

Name

Area of Interest/Title of Thesis

Name of other supervisor (If any)

Year of Award

1.

Abhishek Ray

An optimal design of MEMS based Piezoelectric cantilever with tip mass for energy harvesting application

 

2019

2

Shaik Hafizullaha

(Joint-Supervisor)

An efficient VLSI architecture of AODV protocol with prioritized contention axis clean for a sensor node

Prof. (Dr) Shrish Verma

2019

3.

Ajeet Singh Lowanshi

(Joint-Supervisor)

Performance evolution of workfunction engineered and strained semisuperjunction vertical mosfet

Dr. Anshul Gupta

2019

4.

Prashant Kumar Kushwaha

(Joint-Supervisor)

Performance evolution of strained poly silicon spacer supejunction UMOS

Dr. Anshul Gupta

2019

5

Prateek Bajaj

A surface potential-based threshold voltage and drain current model of core gate cylindrical Mosfet

Dr. GPSC Mishra

2020

6

Prannoy Roy

Deployment of plasma enhancement layer in semi superjunction IGBT

 

2020

7

Rohit Verma

Analysis of SEGR in Trench-VDMOS with High-k Dielectric

 

2021

8

Jyoti kumari

Parametric Analysis of Stepped Gate VDMOS

 

2021

9

Chumki Das

Insulated Gate Bipolar Transistor with Deep Trench Gate Engineering for Improved performance

 

2021

10

Shraddha Yogi

Performance Optimization of IGZO based Junctionless Thin Film Transistor for Low power application.

 

2022

11

Ragini Singh

Sensitivity analysis of Directly Modulated Z-shaped charge plasma TFET based label free biosensor

 

2022

12

MD Amjath

Radiation Hardening of Super junction VDMOS with Gate engineering technique

 

2022

13

Pavuluri Jayadev

Analysis of gate oxides in LDMOS for radiation hardening against SEGR

 

2022

14

Shivam Singh

Single Event Effects analysis of SJVDMOS

 

2023

15

Shriharsh Prasad Behera

Gate Engineering Impact on the Performance of Superjunction Insulated Gate Bipolar Transistor

 

2023

16

Md. Helal Manzoor

Design and Analysis of Under gate cavity GaAs FinFET based Biosensor

 

2023


3. B. Tech Project Supervised

S.No

Title of Project

Name of the student

Name of other supervisor (If any) 

Year of Award

1

Design and simulation of physical layer blocks of zigbee transmitter using verilog

Janam Pandey

Kumar Gaurav

Parul Tripathi

Prof. (Dr) Shrish Verma

2016

2

Implementation of zigbee MAC layer CSMA-CA algorithm

Shreyash Tamrakar

Rashmi Basant

Vivek K. Singh

Prakhar Goyal

Prof. (Dr) Shrish Verma

2016

3

Wireless temperature & humidity monitoring system through ASK modulation technique

Nilay Markam

Sachin Paikera

Prassana Kumar

Prof. (Dr) Shrish Verma

2016

4

Design and simulation of secured Transmitter for WSN

Akshay Sharma

Amit Chakradhari

Aaditya Chaudhary

Jaydeep Rusia

Dr. Shubhankar Majumdar

2017

5

Impact of technology on the power amplifier performance

Chandan Kumar

Dr. Shubhankar Majumdar

2017

6

Thermal analysis of LSDMOS

Jagriti Sahu

Neha Choudhary

Sonalie Ahirwar

-

2017

7

Analysis of VDMOS and CPVDMOS

Atul Dewangan

Deepraj Kant

 

2017

8

Application of workfunction engineering on strained superjunction vertical MOSFET

Prateek Baghel

Dr. Ankush Chunn

2018

9

Design and simulation of AES encryption/decryption algorithm in verilog

Dudekula Sadik Basha

Janugani Thanuj Kumar

-

2018

10

An efficient hardware implementation of Walsh Hadamard transform for Jepg-XR Image compression

Vinay Sharma

M. Srikrishna Maindeep

Dr. Pallab Kumar Nath

2018

11

Implementation of robust CMOS ternary content addressable memory using Cadence GPDK 45nm technology

Prakhar Shukla

Dr. Ankush Chunn

2019

12

Cordic based VLSI architecture for 16-QAM signal generator

Avvari Pavan Kumar

 

2019

13

Cordic based VLSI design of hann windowed sliding DFT

Pentakota Navin Kumar

Ananthula Vijay Sai

 

2019

14

Workfunction engineered stepped oxide planer gate IGBT

Akansh Singh

Sarita Singh

Shraddha Tiwari

 

2019

15

Performance Parameter analysis of power Mosfets

Anjali Agrawaal

Hema Sahu

Shweeta Kumari

 

2019

16

128-Bit Datapath Optomised AES-128 Design for Speech Encryption and Decryption

Astha Agrawal

Rohit Shrivastava

2020

17

Hardware implementation of Unfolded Pipelined AES 128 bit decryption

Chintala Divya

D Sharda

Rohit Shrivastava

2020

18

An 8T TG-DTMOS Based Subthreshold SRAM Cell with Improved Write Ability and Access Times

Akshay Agrawal

Dr. Ankush Chunn

2020

19

A Trench N-barrier layer controlled IGBT” is the bona-fide work done by Ankita Halder

Ankita Halder

Monica Sindhu Chintada

Shreyank Mishra

 

2020

20

Design and Analysis of High Power Density MEMS Energy Harvester

Mrigank Srivastava

Mohit Kushwaha

 

2020

21

UV-C Disinfection Cell for Sanitization of Quotidian Things

Dampanaboyina Teja

Nuka Tejeswararao

P Vamsi Krishna

 

2021

22

Analysis of Vertically Diffused MOSFET

Arpit Gupta

Hritika Singh

Md Anaytullah Ansari

 

2021

23

Electrochemical Biosensor for Glucose Detection

Kadagala Atchum Naidu

Bodiboyina Jagadeesh

Pithani Pavan Kalyan

 

2021

24

Integration and Simulation of CSMA/CA and AES-128 in Verilog

Aditya Nahta

Arnit Dey

Ayam Mahajan

 

2022

25

Improvement of performance of Tunnel Field Effect Transistor & Design of Biosensor

Kalapala Sai Gowtham

Madu Siva Tulasi Ram

T. Abhinav

 

2022

26

Radiation Hardening in Superjunction VDMOS

Aman Tiwari

Kairevu Vikramadithya

Dharna Chandrakar

 

2022

4. Foreign Visits:

  • Timisoara, Romania, Europe for attending 11th ISETC at Politehnica University of Timisoara, Nov 2014.

  • Singapore for attending ACM's Int. Conf. on Graphics and Signal Processing at NTU, June 2017.

  • Hongkong for attending 25th International Conference on “Engineering & Technology, Computer, Basic & Applied Sciences” (ECBA- 2017). July 2017.

  • Bangkok, Thailand for attending 8th Int. Conf. on Computing, Engg. & IT (ICCEIT), March 2018

  • Kathmandu, Nepal for attending 3rd IEEE International Conference on Computing, Communication and Security at Institute of Engineering Tribhuvan University, October 2018. 

5. Professional Membership: 

Senior Member IEEE, IEI, IETE

6. Organization of Courses/Conferences

 

S.No.

Type of Program

Title of the Courses

Sponsored / Jointly Organized by

Date

1

STTP

VLISD-SoC and Micronano Technologies

TEQIP - II

26th to 30th Sep, 2016

2

Conference

National Conference on VLSI, Communication & Computing

TEQIP III

9th Dec, 2017

3

FDP

Machine Learning and IoT

E&ICT Academy, PDPM IIITDMJ

11th to 15th March, 2019

 

7. Expert Talk/Key Note Speaker/ Session Chair:

  • Expert talk on “Recent Trends in VLSI Design” at Hitkarini College of Engineering and Technology on 01/09/2016.

  • Talk on the topic “How to write a research Paper” on 22nd Dec 2016 at R.S.R Rungta College of Engineering and Technology.

  • Expert talk at Hitkarini College of Engineering and Technology from 26th to 28th Dec 2016.

  • Session Chair in International Conference on Innovations & Sustainable Development from 25th -26th March, 2017.

  • Key Note Speaker at AICON, 2016 organized by Electronics & Telecommunication Department of Chhatrapati Shivaji Institute of Technology.

  • Delivered Lecture in STTP organized by Department  of IT, NIT Raipur on “Logic Building using C and MATLAB”  at NIT Raipur in 2016.

  • Delivered Lecture in STTP organized by Department of Electrical Engineering NIT Raipur, on “Optimization Techniques and their implementation using MATLAB”  at NIT Raipur in 2016.

  • Key Note Speaker at AICON, 2017 organized by Electronics & Telecommunication Department of Chhatrapati Shivaji Institute of Technology.

  • Expert Lecture at Smart Electronic Systems & IoT for Smart City 2017 organized at MNIT Jaipur.

  • Expert talk on “Vertical Power MOSFET’s” on 8th -9th Sept. 2017 at G.B. Pant Institute of Engineering and Technology, PAURI Garhwal.

8. Participated in Workshop

  • Participated in TEQIP II sponsored “Faculty Induction Programme” at NIT Raipur in Sept. 2016

  • Attended IEP at IIT Roorkee organized under SMDP C2SD project, MeitY, Govt. of India.

9. Academic Responsibility:

  • Design syllabus of M.Tech in “VLSI and Embedded System” at ETC, NIT Raipur.

  • Set up the Lab of VLSI & Microelectronics and is the lab in-charge from 2015 till date. 

10. Courses Taught:

  • Digital Logic Design

  • VLSI and Microelectronics

  • Semiconductor Devices

  • Analog IC Design